electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

Overview of Thyristor Modules

Thyristor modules are key components in power electronics technology. They consist of one or more thyristors encapsulated in a compact housing. Thyristors are four-layer, three-terminal semiconductor devices that are primarily used in applications that control and regulate high-power AC or DC current. They can quickly switch from a high-impedance state to a low-impedance conduction state based on a trigger signal, thereby achieving precise control of current.

Features and Benefits of Thyristor Modules

High power handling capability: Thyristor modules can withstand extremely high voltages and currents, making them suitable for industrial-grade power conversion and control systems.

Fast response time: Very short switching times and low losses ensure high-efficiency operation.

Reliability and durability: Rugged design, stable operation in harsh environments, and long life.

Easy integration: Modular design simplifies installation and reduces maintenance requirements.

Overload protection: Built-in protection mechanisms such as over-temperature and over-current protection enhance system safety.

Versatile applications: Widely used in a variety of applications requiring precise current control.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Specification of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT component made for industrial power applications, integrating sophisticated Protected Entrance Bipolar Transistor (IGBT) innovation and ultra-fast diode components. This component is maximized for high-efficiency changing in demanding atmospheres such as motor drives, renewable resource systems, and commercial inverters.

** Key Specs: **.
– ** Voltage Rankings: ** The IGBT supports an optimum collector-emitter voltage (Vces) of 1200V, while the integrated diode has a reverse voltage (Vrr) of 1200V.
– ** Existing Ratings: ** Constant collection agency existing (Ic) is rated at 150A at 80 ° C, with a pulsed current capability of as much as 300A. The diode’s average ahead existing (Ifav) is 150A.
– ** Switching over Efficiency: ** Low saturation voltage (Vce( sat)) of 2.1 V at 150A ensures minimal transmission losses. Turn-on and turn-off times are enhanced for high-frequency procedure, lowering switching losses.
– ** Thermal Management: ** Reduced thermal resistance (Rth( j-c)) of 0.12 ° C/W for the IGBT and 0.15 ° C/W for the diode ensures efficient heat dissipation. The component runs within a junction temperature series of -40 ° C to +150 ° C.- ** Diode Characteristics: ** The anti-parallel diode features a quick reverse recuperation time (trr) of 85ns, decreasing reverse recuperation losses and enhancing system performance.
– ** Package: ** Compact and durable 62mm x 108mm x 30mm module with screw terminals for safe high-current links. Includes electric seclusion (2500V AC/min) between elements and heatsink.
– ** Integrated Security: ** Integrated NTC thermistor enables real-time temperature level surveillance, while short-circuit and overcurrent defense safeguards the component.

** Compatibility & Applications: ** The FS150R12KT4 is compatible with conventional entrance drivers and control ICs, making it excellent for three-phase inverters, UPS systems, and welding devices. While the component itself integrates IGBTs and diodes, exterior MOSFETs, SCRs, or thyristors might be made use of in auxiliary circuits for snubber networks or complementary power phases.

This component balances high power density, dependability, and thermal performance, meeting rigorous industrial standards for long life and effectiveness in high-voltage, high-current applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)

Applications of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT (Shielded Gateway Bipolar Transistor) component developed for demanding power electronic devices applications. Incorporating an IGBT, diode, and advanced product packaging, this 1200V, 150A module provides efficient switching, thermal security, and toughness in high-power systems. Its integration of important elements like freewheeling diodes makes sure trustworthy procedure in circuits calling for bidirectional present circulation, making it ideal for industrial, renewable resource, and automotive applications.

** Industrial Motor Drives: ** The FS150R12KT4 excels in variable-frequency drives (VFDs) and servo controllers, where specific electric motor rate and torque control are important. Its low switching losses and high current capability enhance energy efficiency in manufacturing equipment, pumps, and compressors.

** Renewable Resource Equipments: ** In solar inverters and wind generator converters, the component transforms DC to air conditioner power with very little losses. The anti-parallel diodes handle reverse recuperation, while the IGBT manages high-voltage changing, ensuring steady grid assimilation and optimum power harvest.

** Uninterruptible Power Material (UPS): ** The component’s fast switching capability gives smooth power shift throughout blackouts, crucial for data centers and medical care centers. Its toughness supports continual procedure under heavy loads.

** Welding Tools: ** The FS150R12KT4 allows accurate existing control in arc welding makers, ensuring regular performance and reduced warm dissipation.

** Electric Vehicles (EVs): ** Utilized in traction inverters, the component efficiently drives EV electric motors, enhancing battery variety and velocity.

Enhancing the IGBT module, ** thyristors (SCRs)** control high-power air conditioner systems, such as lighting controls and industrial heating units. ** MOSFETs ** deal with high-frequency changing in SMPS and RF amplifiers, while ** transistors ** magnify signals in sound and control circuits. ** IC chips ** incorporate logic and defense attributes, optimizing system intelligence. With each other, these components– consisting of the FS150R12KT4– develop the foundation of contemporary electronic devices, making it possible for technology in automation, clean power, and wise modern technologies. Their synergy ensures dependability, performance, and scalability throughout markets, from hefty equipment to consumer electronics.

Company Profile

PDDN Photoelectron Technology Co., Ltd.(sales@pddn.com) is one of the leading enterprises in power electronics technology and power products, which is fully involved in developing solar inverters， transformers, voltage regulators, distribution cabinets, thyristors， modules， diodes， heaters, and other electronic devices or semiconductors. We will be committed to providing users with high-quality, efficient products and considerate service.

It accepts payment via Credit Card, T/T, West Union, and Paypal. PDDN will ship the goods to customers overseas through FedEx, DHL, by sea, or by air. If you want high-quality electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4, please send us inquiries; we will be here to help you.

Payment Methods

L/C, T/T, Western Union, Paypal, Credit Card etc.

Shipment

By sea, by air, by express, as customers request.

Storage Conditions

1) Store in a dry environment at room temperature.

2) Avoid damp and high temperature.

3) Use immediately after opening the inner packing bag.

5 FAQs of electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4

The FS150R12KT4 is a high-performance IGBT module designed for power electronics applications. Below are five common FAQs with direct answers:

**1. What are the primary applications of the FS150R12KT4 IGBT module?**
The FS150R12KT4 is ideal for high-power switching in industrial motor drives, renewable energy systems (solar/wind inverters), UPS systems, electric vehicle charging stations, and welding equipment. Its robust design supports high voltage (1200V) and current (150A) handling, making it suitable for demanding environments.

**2. What key features enhance its performance?**
This module integrates advanced IGBT and diode technology, offering low saturation voltage (VCE(sat)) for reduced conduction losses and high switching efficiency. It includes a built-in temperature sensor for thermal monitoring, anti-parallel diodes for freewheeling current protection, and a compact, isolated package for easy mounting and heat dissipation.

**3. What are the voltage and current ratings?**
The FS150R12KT4 has a maximum collector-emitter voltage (VCES) of 1200V and a continuous collector current (IC) of 150A at 80°C. Peak current handling can reach up to 300A, ensuring reliability during transient overloads.

**4. How is thermal management addressed?**
Efficient heat dissipation is achieved through an aluminum nitride (AlN) ceramic substrate and low thermal resistance design. Users must pair the module with a properly sized heatsink, thermal paste, and active cooling (fans or liquid cooling) in high-load applications. Operating temperature should stay below 150°C to prevent damage.

**5. What ensures long-term reliability?**
Lifespan depends on operating conditions. Staying within rated voltage, current, and temperature limits is critical. Avoid mechanical stress during installation, ensure clean power input to reduce voltage spikes, and follow the manufacturer’s guidelines for storage and handling. Regular maintenance and thermal cycling checks further enhance durability, typically offering tens of thousands of hours in standard applications.

(electronics component IGBT MODULE Diode Thyristor SCR transistors mosfet IC chips FS150R12KT4)