New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

Introduction of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery (GTO) and fast recovery diode (FRD) modules are important components in power electronics, combining the fast turn-off characteristics of GTOs with the low forward voltage drop and fast recovery time of FRDs. These modules are capable of providing efficient switching performance at high voltages and high currents and are widely used in applications requiring fast, efficient power conversion.

Features and Benefits of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

Fast turn-off capability: GTOs can turn off quickly when a negative gate pulse is applied, dramatically reducing switching losses.

Low Forward Voltage Drop: FRDs have a low forward conduction voltage drop, reducing conduction losses and improving overall efficiency.

High inrush current tolerance: Capable of handling transient high-current inrush without damage, enhancing system reliability and durability.

Compact design: Integrating the GTO and FRD in a single module reduces system size and simplifies circuit design.

Excellent thermal performance: Good thermal design ensures stable operation under heavy load conditions.

Reduced electromagnetic interference (EMI): Due to its fast recovery characteristics, it can effectively reduce EMI and improve power quality.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)

Specification of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

The IRFB4229PBF is a high-performance N-channel MOSFET transistor designed for power-switching applications, offering robust efficiency and reliability. Packaged in a TO-220 format, this component is ideal for industrial, automotive, and renewable energy systems. Key specifications include a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 120A at 25°C, making it suitable for high-current applications. The pulsed drain current reaches 480A, ensuring resilience during transient load conditions. With a low on-resistance (Rds(on)) of 3.3mΩ (max at Vgs=10V), it minimizes conduction losses, enhancing energy efficiency.

The IRFB4229PBF features a gate charge (Qg) of 210nC (typical) and a gate threshold voltage (Vgs(th)) of 2V to 4V, enabling fast switching for PWM-driven circuits. Its robust thermal performance is supported by a low thermal resistance (RθJA) of 62°C/W, paired with a power dissipation rating of 330W. The integrated body diode offers reverse recovery protection, with a diode forward voltage (Vsd) of 1.5V (max) at 120A.

This transistor is RoHS-compliant and operates within a temperature range of -55°C to 175°C, ensuring durability in harsh environments. The TO-220 package allows easy mounting and heat sinking, with a recommended torque of 0.5 N·m for terminal screws. Applications include DC-DC converters, motor drives, UPS systems, and solar inverters.

BOM (Bill of Materials) support is streamlined, as the IRFB4229PBF is compatible with standard drivers and PCB layouts. For optimal performance, pair it with gate drivers like IRS2186 or similar, and use 10-15V gate-source voltage. Fast delivery options are available globally, with stock maintained for urgent orders.

In summary, the IRFB4229PBF combines high power density, thermal efficiency, and switching speed, making it a versatile choice for demanding applications. Its TO-220 package ensures ease of integration, while its electrical specs cater to both industrial and commercial power systems. Reliable performance, compliance with environmental standards, and accessible inventory solidify its position as a go-to MOSFET for engineers prioritizing efficiency and fast deployment.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)

Applications of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

The IRFB4229PBF from Infineon Technologies is a high-performance N-channel MOSFET in a TO-220 package, engineered for demanding high-power applications. Featuring a 250V voltage rating and a continuous drain current of 195A, this transistor delivers ultra-low on-resistance (Rds(on)) for superior efficiency and minimal heat generation. Its robust design ensures reliability in harsh environments, making it a preferred choice for industrial, automotive, and renewable energy systems.

Primary applications include switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and industrial inverters. The IRFB4229PBF excels in automotive applications such as electric vehicle (EV) powertrains, battery management systems, and onboard chargers. In renewable energy, it is integral to solar inverters and wind turbine converters, where efficient power conversion is critical. Additionally, it is used in welding equipment, uninterruptible power supplies (UPS), and high-current power tools. The TO-220 package enhances thermal management, enabling effective heat dissipation via heatsinks—essential for sustained high-current operations in motor drives and power inverters.

To simplify integration, the IRFB4229PBF comes with comprehensive Bill of Materials (BOM) support, detailing compatible gate drivers, resistors, capacitors, and protection components like transient voltage suppressors. This BOM guidance accelerates design cycles, reduces sourcing complexity, and ensures system reliability. Engineers can leverage pre-validated component lists to optimize circuit performance and avoid compatibility issues.

Fast delivery is guaranteed, with ample stock available for immediate dispatch. Partnering with global logistics networks ensures same-day shipping for urgent orders, minimizing project lead times. Each IRFB4229PBF unit is factory-tested and RoHS-compliant, adhering to stringent quality and environmental standards.

In summary, the IRFB4229PBF combines high-power capabilities with seamless integration support and rapid availability. Whether for industrial automation, next-gen automotive solutions, or sustainable energy projects, this MOSFET offers unmatched performance, durability, and efficiency.

Company Profile

PDDN Photoelectron Technology Co., Ltd.(sales@pddn.com) is one of the leading enterprises in power electronics technology and power products, which is fully involved in developing solar inverters， transformers, voltage regulators, distribution cabinets, thyristors， modules， diodes， heaters, and other electronic devices or semiconductors. We will be committed to providing users with high-quality, efficient products and considerate service.

It accepts payment via Credit Card, T/T, West Union, and Paypal. PDDN will ship the goods to customers overseas through FedEx, DHL, by sea, or by air. If you want high-quality New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery, please send us inquiries; we will be here to help you.

Payment Methods

L/C, T/T, Western Union, Paypal, Credit Card etc.

Shipment

By sea, by air, by express, as customers request.

Storage Conditions

1) Store in a dry environment at room temperature.

2) Avoid damp and high temperature.

3) Use immediately after opening the inner packing bag.

5 FAQs of New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery

What is the primary application of the IRFB4229PBF transistor? The IRFB4229PBF is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is commonly used in power supplies, motor control systems, DC-DC converters, and inverters. With a low on-resistance (Rds(on)) of 3.6 mΩ and a drain-source voltage (Vds) rating of 250V, it efficiently handles high current loads up to 195A (pulsed), making it ideal for industrial and automotive applications requiring robust performance and thermal stability.

What are the key electrical specifications of the IRFB4229PBF? This MOSFET operates at a maximum drain-source voltage (Vds) of 250V and a continuous drain current (Id) of 75A at 25°C, which decreases with temperature. The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, and it features a fast switching speed due to low gate charge (Qg) of 210nC. Its avalanche energy rating ensures reliability in high-stress conditions. Always refer to the datasheet for derating guidelines based on thermal and electrical conditions.

Does the IRFB4229PBF require specific components in the BOM (Bill of Materials)? Yes. To optimize performance, pair the IRFB4229PBF with a gate driver (e.g., IR2110 or HCPL-3120) to ensure proper voltage levels for switching. Include a gate resistor (10-100Ω) to control rise/fall times and suppress oscillations. A freewheeling diode (e.g., STTH8R06) is recommended for inductive load protection. Thermal management components like heatsinks, thermal pads, and mounting hardware are essential due to its TO-220 package and high-power dissipation.

What is the typical delivery time for the IRFB4229PBF? Most distributors stock the IRFB4229PBF in bulk, enabling fast delivery within 1-3 business days for standard orders. Express shipping options are available for urgent requirements. Ensure compatibility with your location and supplier inventory for accurate lead times. This part is widely available through authorized channels like Infineon’s network or trusted electronics distributors.

How does the IRFB4229PBF compare to similar MOSFETs like the IRFB4232 or IRFB4110? The IRFB4229PBF offers a balance of voltage (250V) and current (75A continuous) ratings, suited for medium-high power applications. The IRFB4232 (250V, 104A) has lower Rds(on) but higher cost, while the IRFB4110 (100V, 180A) is better for lower-voltage, higher-current scenarios. Choose the IRFB4229PBF for cost-effective 250V systems requiring efficient thermal performance and fast switching. Always cross-check specifications with your application’s requirements.

(New original dip transistor IRFB4229PBF TO-220 IRFB4229 Support BOM Fast delivery)